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? 2001-2012 microchip technology inc. ds21468b-page 1 tc7662a features ? wide operating range - 3v to 18v ? increased output current (40ma) ? pin compatible with icl7662/si7661/tc7660/ ltc1044 ? no external diodes required ? low output impedance @ i l = 20ma -40 ? typ. ? no low-voltage terminal required ? cmos construction ? available in 8-pin pdip and 8-pin cerdip packages applications ? laptop computers ?disk drives ? process instrumentation ? ? p-based controllers device selection table package type general description the tc7662a is a pin-compatible upgrade to the industry standard tc7660 charge pump voltage converter. it converts a +3v to +18v input to a corresponding -3v to -18v output using only two low- cost capacitors, eliminating inductors and their associated cost, size and emi. in addition to a wider power supply input range (3v to 18v versus 1.5v to 10v for the tc7660), the tc7662a can source output currents as high as 40ma. the on-board oscillator operates at a nominal frequency of 12khz. operation below 12khz (for lower supply current applications) is also possible by connecting an external capacitor from osc to ground. the tc7662a directly is recommended for designs requiring greater output current and/or lower input/ output voltage drop. it is available in 8-pin pdip and cerdip packages in commercial and extended temperature ranges. part number package operating temp. range tc7662acpa 8-pin pdip 0c to +70c tc7662aepa 8-pin pdip -40c to +85c tc7662aija 8-pin cerdip -25c to +85c tc7662amja 8-pin cerdip -55c to +125c 1 2 3 4 8 7 6 5 tc7662a nc c + gnd c ? v out nc osc v dd 8-pin pdip 8-pin cerdip charge pump dc-to-dc converter
tc7662a ds21468b-page 2 ? 2001-2012 microchip technology inc. functional block diagram + ? comparator with hysteresis c f/f q q v ref level shift v dd p sw1 cap c p ext n sw4 n sw2 n sw3 cap c r ext r l v out i osc + gnd ? 8 2 3 out 5 4 7 + + tc7662a level shift level shift level shift
? 2001-2012 microchip technology inc. ds21468b-page 3 tc7662a 1.0 electrical characteristics absolute maximum ratings* supply voltage v dd to gnd................................. +18v input voltage (any pin) .........(v dd + 0.3) to (v ss ? 0.3) current into any pin ............................................ 10ma output short circuit ........... continuous (at 5.5v input) esd protection ................................................ 2000v package power dissipation (t a ? 70c) 8-pin cerdip .......................................... 800mw 8-pin pdip ............................................... 730mw package thermal resistance cpa, epa ? ja ......................................... 140c/w ija, mja ? ja ............................................ 90c/w operating temperature range c suffix............................................ 0c to +70c i suffix .......................................... -25c to +85c e suffix......................................... -40c to +85c m suffix ...................................... -55c to +125c storage temperature range.............. -65c to +150c stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the spec ifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. tc7662a electrical specifications electrical characteristics: v dd = 15v, t a = +25c, test circuit (figure 3-1) unless otherwise noted. symbol parameter min typ max units test conditions v dd supply voltage 3 ? 18 v i s supply current ? ? ? ? ? ? ? ? 510 560 650 190 210 210 ? 700 ? ? ? ? ? ? ar l = ? v dd = +15v 0 ? c ? t a ? +70 ? c -55c ? t a ? +125c v dd = +5v 0 ? c ? t a ? +70 ? c -55c ? t a ? +125c r o output source resistance ? ? ? 40 50 100 50 60 125 ? i l = 20ma, v dd = +15v i l = 40ma, v dd = +15v i l = 3ma, v dd = +5v f osc oscillator frequency ? 12 ? khz p eff power efficiency 93 ? 97 ? ? ? %v dd = +15v r l = 2k ? v eff voltage efficiency 99 ? 96 99.9 ? ? ? ? ? %v dd = +15v r l = ? over operating temperature range.
tc7662a ds21468b-page 4 ? 2001-2012 microchip technology inc. 2.0 pin descriptions the descriptions of the pins are listed in table 2-1. table 2-1: pin function table pin no. (8-pin pdip, cerdip) symbol description 1 nc no connection. 2c + charge pump capacitor positive terminal. 3 gnd ground terminal. 4c - charge pump capacitor negative terminal. 5v out output voltage. 6 nc no connection. 7 osc oscillator control input. bypass with an external capacitor to slow the oscillator. 8v dd power supply positive voltage input.
? 2001-2012 microchip technology inc. ds21468b-page 5 tc7662a 3.0 detailed description the tc7662a is a capacitive charge pump (sometimes called a switched-capacitor circuit), where four mosfet switches control the charge and discharge of a capacitor. the functional block diagram shows how the switching action works. sw1 and sw2 are turned on simulta- neously, charging c p to the supply voltage, v dd . this assumes that the on resistance of the mosfets in series with the capacitor produce a charging time (3 time constants) less than the on time provided by the oscillator frequency, as shown: 3 (r ds(on) c p ) tc7662a ds21468b-page 6 ? 2001-2012 microchip technology inc. 4.0 typical applications 4.1 simple negative voltage converter the majority of applications will undoubtedly utilize the tc7662a for generation of negative supply voltages. figure 4-1 shows typical connections to provide a negative supply where a positive supply of +3v to +18v is available. figure 4-1: simple negative converter and its output equivalent the output characteristics of the circuit in figure 4-1 are those of a nearly ideal voltage source in series with a resistance as shown in figure 4-1b. the voltage source has a value of -(v dd ). the output impedance (r o ) is a function of the on resistance of the internal mos switches (shown in the functional block diagram), the switching frequency, the value of c p and c r , and the esr (equivalent series resistance) of c p and c r . a good first order approximation for r o is: combining the four r swx terms as r sw , we see that: r sw , the total switch resistance, is a function of supply voltage and temperature (see section 5.0, typical characteristics ?output source resistance? graphs), typically 23 ? at +25c and 5v. careful selection of c p and c r will reduce the remaining terms, minimizing the output impedance. high value capacitors will reduce the 1/(f pump x c p ) component, and low esr capacitors will lower the esr term. increasing the oscillator frequency will reduce the 1/(f pump x c p ) term, but may have the side effect of a net increase in output impedance when c p > 10 ? f and there is not enough time to fully charge the capacitors every cycle. in a typ- ical application when f osc = 12khz and c = c p = c r = 10 ? f: since the esrs of the capacitors are reflected in the output impedance multiplied by a factor of 5, a high value could potentially swamp out a low 1/(f pump x c p ) term, rendering an increase in switching frequency or filter capacitance ineffective. typical electrolytic capacitors may have esrs as high as 10 ? . 1 2 3 4 8 7 6 5 tc7662a 10 f + v dd + 10 f v out = -v+ ? v out r o v dd v dd v dd v dd + ? ab r o ? 2(r sw1 + r sw2 + esr cp ) + 2(r sw3 + r sw4 + esr cp ) + + esr cr 1 f pump x c p (f pump = , r swx = mosfet switch resistance) f osc 2 r o ? 2 x r sw + + 4 x esr cp + esr cr ? 1 f pump x c p r o ? 2 x 23 + + 4 x esr cp + esr cr 1 (5 x 12 3 x 10 x 10 -6 ) r o ? (46 + 20 + 5 x esr c ) ?
? 2001-2012 microchip technology inc. ds21468b-page 7 tc7662a 4.2 output ripple esr also affects the ripple voltage seen at the output. the total ripple is determined by 2 voltages, a and b, as shown in figure 4-2. segment a is the voltage drop across the esr of c r at the instant it goes from being charged by c p (current flowing into c r ) to being dis- charged through the load (current flowing out of c r ). the magnitude of this current change is 2 x i out , hence the total drop is 2 x i out x esr cr volts. segment b is the voltage change across c r during time t 2 , the half of the cycle when c r supplies current to the load. the drop at b is i out x t 2 /c r volts. the peak-to-peak ripple voltage is the sum of these voltage drops: figure 4-2: output ripple 4.3 paralleling devices any number of tc7662a voltage converters may be paralleled to reduce output resistance (figure 4-3). the reservoir capacitor, c r , serves all devices, while each device requires its own pump capacitor, c p . the resultant output resistance would be approximately: 4.4 cascading devices the tc7662a may be cascaded as shown (figure 4-4) to produce larger negative multiplication of the initial supply voltage. however, due to the finite efficiency of each device, the practical limit is 10 devices for light loads. the output voltage is defined by: v out = ? n (v in ) where n is an integer representing the number of devices cascaded. the resulting output resistance would be approximately the weighted sum of the individual tc7662a r out values. figure 4-3: paralleling devices lowers output impedance figure 4-4: increased output voltage by cascading devices 1 2 x f pump x c r v ripple ? ( + 2 x esr cr x i out ) t 2 t 1 b a v 0 -(v dd ) r out = r out (of tc7662a) n (number of devices) 1 2 3 4 8 7 6 5 tc7662a v dd 1 2 3 4 8 7 6 5 tc7662a r l c 2 c 1 "n" "1" + c 1 1 2 3 4 8 7 6 5 v dd 1 2 3 4 8 7 6 5 10 f 10 f "n" "1" 10 f v out * + + + tc7662a tc7662a *v out = -nv dd 10 f
tc7662a ds21468b-page 8 ? 2001-2012 microchip technology inc. 4.5 changing the tc7662a oscillator frequency it is possible to increase the conversion efficiency of the tc7662a at low load levels by lowering the oscillator frequency. this reduces the switching losses, and is shown in figure 4-5. however, lowering the oscillator frequency will cause an undesirable increase in the impedance of the pump (c p ) and reservoir (c r ) capacitors; this is overcome by increasing the values of c p and c r by the same factor that the frequency has been reduced. for example, the addition of a 100pf capacitor between pin 7 (osc) and v dd will lower the oscillator frequency to 2khz from its nominal frequency of 12khz (multiple of 6), and thereby necessitate a corresponding increase in the value of c p and c r (from 10 ? f to 68 ? f). figure 4-5: lowering oscillator frequency 4.6 positive voltage doubling the tc7662a may be employed to achieve positive voltage doubling using the circuit shown in figure 4-6. in this application, the pump inverter switches of the tc7662a are used to charge c p to a voltage level of v dd ? v f (where v dd is the supply voltage and v f is the forward voltage on c p plus the supply voltage (v dd ) applied through diode d 2 to capacitor c r ). the voltage thus created on c r becomes (2 v dd ) ? (2 v f ), or twice the supply voltage minus the combined forward voltage drops of diodes d 1 and d 2 . the source impedance of the output (v out ) will depend on the output current, but for v dd = 5v and an output current of 10 ma, it will be approximately 60 ? . figure 4-6: positive voltage multiplier 4.7 combined negative voltage conversion and positive supply multiplication figure 4-7 combines the functions shown in figure 4-1 and figure 4-6 to provide negative voltage conversion and positive voltage doubling simultaneously. this approach would be, for example, suitable for generat- ing +9v and -5v from an existing +5v supply. in this instance, capacitors c 1 and c 3 perform the pump and reservoir functions, respectively, for the generation of the negative voltage, while capacitors c 2 and c 4 are pump and reservoir, respectively, for the doubled positive voltage. there is a penalty in this configuration which combines both functions, however, in that the source impedances of the generated supplies will be somewhat higher due to the finite impedance of the common charge pump driver at pin 2 of the device. figure 4-7: combined negative converter and positive doubler 4.8 voltage splitting the same bidirectional characteristics can be used to split a higher supply in half, as shown in figure 4-8. the combined load will be evenly shared between the two sides. because the switches share the load in parallel, the output impedance is much lower than in the standard circuits, and higher currents can be drawn from the device. by using this circuit, and then the circuit of figure 4-4, +15v can be converted (via +7.5v and -7.5v) to a nominal -15v, though with rather high series resistance (~250 ? ). figure 4-8: splitting a supply in half 1 2 3 4 8 7 6 5 + v out c osc + tc7662a 10 f 10 f v dd 1 2 3 4 8 7 6 5 v out = (2 v dd ) ? (2 v f ) + c r d 1 d 2 + c p tc7662a v dd 1 2 3 4 8 7 6 5 + v dd v out = (2 v dd ) ? (2 v f ) c 1 d 1 + + c 3 c 4 v out = -(v dd ? v f ) c 2 tc7662a d 2 + + r l1 r l2 v out = v dd ? v ? 2 50 f 50 f v dd v ? 50 f + 1 2 8 7 tc7662a 3 4 6 5 + ? ? ?
? 2001-2012 microchip technology inc. ds21468b-page 9 tc7662a 5.0 typical characteristics circuit of figure 3-1, c p = c r = 10 ? f, c esrcp ? c esrcr ? 1 ? , t a = 25c unless otherwise noted. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 700 600 500 400 300 200 100 -60 -40 -20 0 20 40 60 80 100 120 140 temperature ( c) supply current ( a) v dd = 15v v dd = 5v 0 supply current vs. temperature 20 18 16 14 12 10 8 -60 -40 -20 0 20 40 60 80 100 120 140 temperature ( c) frequency (khz) 6 frequency vs. temperature 100 load current (ma) power conversion efficiency (%) power conversion efficiency vs. i load 16 32 48 64 80 80 60 40 20 90 70 50 30 10 824405672 0 150 120 90 60 30 135 105 75 45 15 0 supply current (ma) efficiency supply current 110 t a = +25 c 165 1k 1 00 1 1 0 1 00 1 000 10 , 00 0 capacitance ( pf ) f requency ( hz ) 1 0 oscillator frequenc y vs. c osc 1 0k t a t = +2 5 c) output resistance ( ) v dd = 15v, i l = 20ma output resistance vs. temperature 20 v dd = 5v, i l = 3ma 110 i l = 20ma t a = +25 c
tc7662a ds21468b-page 10 ? 2001-2012 microchip technology inc. 6.0 packaging information 6.1 package marking information package marking data not available at this time. 6.2 package dimensions 3 min. pin 1 .260 ( 6.60 ) .240 ( 6.10 ) .045 ( 1.14 ) .030 ( 0.76 ) .070 ( 1.78 ) .040 ( 1.02 ) .400 ( 10.16 ) .348 ( 8.84 ) .200 ( 5.08 ) .140 ( 3.56 ) .150 ( 3.81 ) .115 ( 2.92 ) .110 ( 2.79 ) .090 ( 2.29 ) .022 ( 0.56 ) .015 ( 0.38 ) .040 ( 1.02 ) .020 ( 0.51 ) .015 ( 0.38 ) .008 ( 0.20 ) .310 ( 7.87 ) .290 ( 7.37 ) .400 ( 10.16 ) .310 ( 7.87 ) 8 -p i n plast i c di p dimensions: inches (mm) note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2001-2012 microchip technology inc. ds21468b-page 11 tc7662a .400 ( 10.16 ) .370 ( 9.40 ) .300 ( 7.62 ) .230 ( 5.84 ) .065 ( 1.65 ) .045 ( 1.14 ) .055 ( 1.40 ) max . .020 (0.51) min . pin 1 .200 ( 5.08 ) .160 ( 4.06 ) .200 ( 5.08 ) .125 ( 3.18 ) .110 ( 2.79 ) .090 ( 2.29 ) .020 ( 0.51 ) .016 ( 0.41 ) .040 ( 1.02 ) .020 ( 0.51 ) .320 ( 8.13 ) .290 ( 7.37 ) .150 ( 3.81 ) min. 3 8-pin cdip (narrow) .015 ( 0.38 ) .008 ( 0.20 ) .400 ( 10.16 ) .320 ( 8.13 ) dimensions: inches (mm) note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc7662a ds21468b-page 12 ? 2001-2012 microchip technology inc. 7.0 revision history revision b (december 2012) added a note to each package outline drawing.
? 2001-2012 microchip technology inc. ds21468b-page13 tc7662a sales and support data sheets products supported by a preliminary data sheet may have an e rrata sheet describing minor operational differences and recom- mended workarounds. to determine if an erra ta sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products.
tc7662a ds21468b-page14 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21468b-page 15 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2001-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620768426 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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